Direct-Write Electron Beam Lithography

Description

Direct write electron beam lithography requires chemistry suited to precise pattern formation at the micro- and nanoscale. At DisChem, our H-SiQ negative-tone resist is developed for direct-write thin-film EBL applications. H-SiQ is a hydrogen silsesquioxane resist derived from dry silica resin in a semiconductor-grade MIBK carrier solvent. We focus on providing specialized lithography chemistry that supports customers working on advanced patterning requirements and demanding electron beam fabrication processes.